NPN Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a maximum collector current of 200mA and a collector-emitter breakdown voltage of 45V. Offers a minimum DC current gain (hFE) of 500 and a transition frequency of 700MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 300mW. Packaged in a 3000-piece tape and reel.
Frequency700MHz
PackageSOT-23-3
Current Rating200mA
PolarityNPN
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Technical Specifications
Onsemi MMBT6429LT1 technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 55V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 700MHz |
| Gain Bandwidth Product | 700MHz |
| hFE Min | 500 |
| Lead Free | Contains Lead |
| Max Collector Current | 200mA |
| Max Frequency | 700MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Transition Frequency | 700MHz |
| DC Rated Voltage | 50V |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Onsemi MMBT6429LT1 Datasheet
Download the complete datasheet for Onsemi MMBT6429LT1 to view detailed technical specifications.
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