NPN Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a 45V Collector-Emitter Voltage (VCEO) and 200mA Max Collector Current. Offers a minimum DC current gain (hFE) of 500 and a transition frequency of 700MHz. Operates across a temperature range of -55°C to 150°C with a power dissipation of 300mW. This component is RoHS and Halogen Free.
Frequency700MHz
PackageSOT-23-3
Current Rating200mA
PolarityNPN
Quick Jump:
Technical Specifications
Onsemi MMBT6429LT1G technical specifications.
General
Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
55V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
600mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
600mV
Current Rating
200mA
Emitter Base Voltage (VEBO)
6V
Frequency
700MHz
Gain Bandwidth Product
700MHz
Halogen Free
Halogen Free
Height
1.01mm
hFE Min
500
Lead Free
Lead Free
Length
3.04mm
Max Breakdown Voltage
45V
Max Collector Current
200mA
Max Frequency
700MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
225mW
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
300mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
700MHz
DC Rated Voltage
45V
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi MMBT6429LT1G Datasheet
Download the complete datasheet for Onsemi MMBT6429LT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
