High voltage NPN bipolar junction transistor in a SOT-23-3 package. Features a 350V collector-emitter breakdown voltage and 350V collector-base voltage. Offers a maximum collector current of 100mA and a transition frequency of 200MHz. This lead-free component operates from -55°C to 150°C with a power dissipation of 300mW.
Frequency200MHz
PackageSOT-23-3
Current Rating500mA
PolarityNPN
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Technical Specifications
Onsemi MMBT6517LT1G technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 350V |
| Collector Emitter Breakdown Voltage | 350V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 350V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| Height | 1.11mm |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Breakdown Voltage | 350V |
| Max Collector Current | 100mA |
| Max Frequency | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 350V |
| Width | 2.64mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MMBT6517LT1G Datasheet
Download the complete datasheet for Onsemi MMBT6517LT1G to view detailed technical specifications.
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