High voltage NPN bipolar junction transistor in a SOT-23-3 package. Features a 350V collector-emitter breakdown voltage and 350V collector-base voltage. Offers a maximum collector current of 100mA and a transition frequency of 200MHz. This lead-free component operates from -55°C to 150°C with a power dissipation of 300mW.
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| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 350V |
| Collector Emitter Breakdown Voltage | 350V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 350V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| Height | 1.11mm |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Breakdown Voltage | 350V |
| Max Collector Current | 100mA |
| Max Frequency | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 350V |
| Width | 2.64mm |
| RoHS | Compliant |
These are design resources that include the Onsemi MMBT6517LT1G
Product discontinuance notice for ON Semiconductor discrete, analog, logic, ECL, and power products with a last buy date of March 31, 2009.
ON Semiconductor product discontinuance notice for parts sourced from Panjit Americas. Includes last time buy/ship dates and recommended replacements from Fairchild and NXP.
