The MMBT6517LT3G is an NPN bipolar junction transistor with a collector-emitter breakdown voltage of 350V and a current rating of 500mA. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 225mW. The transistor is packaged in a SOT-23-3 package and is lead-free and RoHS compliant. It has a gain bandwidth product of 200MHz and a minimum current gain of 20.
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| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 350V |
| Collector Emitter Breakdown Voltage | 350V |
| Collector Emitter Saturation Voltage | 1V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 350V |
| Max Collector Current | 100mA |
| Max Frequency | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 350V |
| RoHS | Compliant |
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These are design resources that include the Onsemi MMBT6517LT3G
ON Semiconductor product discontinuance notice for parts sourced from Panjit Americas. Includes last time buy/ship dates and recommended replacements from Fairchild and NXP.
Official notice from ON Semiconductor detailing the discontinuance of various discrete, analog, and power products with final buy dates in late 2006.
