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Technical Specifications
Onsemi MMBT6517LT3G technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 350V |
| Collector Emitter Breakdown Voltage | 350V |
| Collector Emitter Saturation Voltage | 1V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 350V |
| Max Collector Current | 100mA |
| Max Frequency | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 350V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MMBT6517LT3G Datasheet
Download the complete datasheet for Onsemi MMBT6517LT3G to view detailed technical specifications.
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