NPN bipolar junction transistor in a SOT-23-3 package. Features a 60V collector-emitter voltage (VCEO) and a maximum collector current of 500mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 100MHz. Power dissipation is rated at 300mW, with an operating temperature range of -55°C to 150°C. Supplied on tape and reel.
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Onsemi MMBTA05LT1G technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | 96.1A |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 1.11mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 500mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 60V |
| Width | 2.64mm |
| RoHS | Compliant |
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