High voltage NPN bipolar junction transistor (BJT) in a SOT-23-3 package. Features a 300V collector-emitter breakdown voltage and 500mA maximum collector current. Offers a minimum DC current gain (hFE) of 25 and a transition frequency of 50MHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 225mW. Supplied on a 3000-piece tape and reel.
Frequency50MHz
PackageSOT-23-3
Current Rating500mA
PolarityNPN
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Technical Specifications
Onsemi MMBTA42LT1G technical specifications.
General
Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
300V
Collector Emitter Breakdown Voltage
300V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
300V
Collector-emitter Voltage-Max
500mV
Current Rating
500mA
Emitter Base Voltage (VEBO)
6V
Frequency
50MHz
Gain Bandwidth Product
50MHz
Height
0.94mm
hFE Min
25
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
300V
Max Collector Current
500mA
Max Frequency
50MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
225mW
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
300mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
50MHz
DC Rated Voltage
300V
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi MMBTA42LT1G Datasheet
Download the complete datasheet for Onsemi MMBTA42LT1G to view detailed technical specifications.
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