PNP Bipolar Junction Transistor (BJT) in SOT-23 package. Features a maximum collector current of 500mA and a collector-emitter breakdown voltage of 80V. Offers a maximum power dissipation of 350mW and a transition frequency of 50MHz. Operates within a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
Frequency50MHz
PackageSOT-23
Current Rating-500mA
MountingSurface Mount
Quick Jump:
Technical Specifications
Onsemi MMBTA56 technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector Emitter Voltage (VCEO) | -80V |
| Collector-emitter Voltage-Max | 200mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -4V |
| Height | 0.93mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 500mA |
| Max Frequency | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -80V |
| Weight | 0.03g |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MMBTA56 Datasheet
Download the complete datasheet for Onsemi MMBTA56 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
