PNP Bipolar Junction Transistor in a SOT-23-3 package. Features a collector-emitter voltage (VCEO) of 80V and a maximum collector current of 500mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 50MHz. Operates within a temperature range of -55°C to 150°C with a power dissipation of 225mW.
Frequency50MHz
PackageSOT-23-3
Current Rating-500mA
PolarityPNP
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Technical Specifications
Onsemi MMBTA56LT1 technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 100 |
| Lead Free | Contains Lead |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| RoHS Compliant | No |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -80V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MMBTA56LT1 Datasheet
Download the complete datasheet for Onsemi MMBTA56LT1 to view detailed technical specifications.
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