PNP Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a collector-emitter voltage (VCEO) of 80V, maximum collector current of 500mA, and a transition frequency of 50MHz. Offers a minimum hFE of 100 and a maximum power dissipation of 300mW. Operates across a temperature range of -55°C to 150°C. Packaged in a 10000-piece tape and reel.
Frequency50MHz
PackageSOT-23-3
Current Rating-500mA
PolarityPNP
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Technical Specifications
Onsemi MMBTA56LT3G technical specifications.
General
Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
-250mV
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
250mV
Current Rating
-500mA
Emitter Base Voltage (VEBO)
4V
Frequency
50MHz
Gain Bandwidth Product
50MHz
Height
1.01mm
hFE Min
100
Lead Free
Lead Free
Length
3.04mm
Max Breakdown Voltage
80V
Max Collector Current
500mA
Max Frequency
50MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
225mW
Number of Elements
1
Package Quantity
10000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
300mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
50MHz
Type
General Purpose
DC Rated Voltage
-80V
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi MMBTA56LT3G Datasheet
Download the complete datasheet for Onsemi MMBTA56LT3G to view detailed technical specifications.
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