The MMBTA56WT1 is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 80V and a maximum collector current of 500mA. It operates over a temperature range of -55°C to 150°C and is packaged in a tape and reel format. The transistor has a gain bandwidth product of 50MHz and a minimum current gain of 100. It is not RoHS compliant due to the presence of lead.
Current Rating-500mA
PolarityPNP
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Technical Specifications
Onsemi MMBTA56WT1 technical specifications.
General
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 4V |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 100 |
| Lead Free | Contains Lead |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | No |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -80V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MMBTA56WT1 Datasheet
Download the complete datasheet for Onsemi MMBTA56WT1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.