
High voltage PNP bipolar junction transistor in a SOT-23-3 package, offering a 300V collector-emitter breakdown voltage and 300V collector-base voltage. Features a maximum collector current of 500mA, a minimum hFE of 25, and a transition frequency of 50MHz. Operates across a temperature range of -55°C to 150°C with a power dissipation of 300mW. This lead-free, RoHS compliant component is supplied on a 10000-piece tape and reel.
Onsemi MMBTA92LT3G technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Number of Elements | 1 |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -300V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MMBTA92LT3G to view detailed technical specifications.
No datasheet is available for this part.
