High voltage PNP bipolar junction transistor in a SOT-23-3 package, offering a 300V collector-emitter breakdown voltage and 300V collector-base voltage. Features a maximum collector current of 500mA, a minimum hFE of 25, and a transition frequency of 50MHz. Operates across a temperature range of -55°C to 150°C with a power dissipation of 300mW. This lead-free, RoHS compliant component is supplied on a 10000-piece tape and reel.
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| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Number of Elements | 1 |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -300V |
| RoHS | Compliant |
These are design resources that include the Onsemi MMBTA92LT3G
Official notice from ON Semiconductor detailing the discontinuance of various discrete, analog, and power products with final buy dates in late 2006.
