NPN RF BJT transistor in SOT-723-3 package. Features 25V collector-emitter breakdown voltage (VCEO) and 30V collector-base breakdown voltage (VCBO). Offers a maximum collector current of 4mA and a power dissipation of 640mW. Operates with a transition frequency of 650MHz and a gain bandwidth product of 650MHz. This lead-free, RoHS-compliant component is supplied on tape and reel.
Frequency650MHz
PackageSOT-723-3
PolarityNPN
Power640mW
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Technical Specifications
Onsemi MMBTH10M3T5G technical specifications.
General
| Package/Case | SOT-723-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 25V |
| Emitter Base Voltage (VEBO) | 3V |
| Frequency | 650MHz |
| Gain Bandwidth Product | 650MHz |
| Height | 0.55mm |
| Lead Free | Lead Free |
| Length | 1.25mm |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 4mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 640mW |
| Number of Elements | 1 |
| Package Quantity | 8000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 640mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 650MHz |
| Width | 0.85mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MMBTH10M3T5G Datasheet
Download the complete datasheet for Onsemi MMBTH10M3T5G to view detailed technical specifications.
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