
PNP RF BJT transistor with a 20V collector-emitter voltage (VCEO) and 50mA continuous collector current. Features a 600MHz transition frequency and 225mW power dissipation in a 3-pin SOT-23 surface mount package. Operates from -55°C to 150°C, with a minimum hFE of 60. RoHS compliant and lead-free.
Onsemi MMBTH81 technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 20V |
| Continuous Collector Current | 50mA |
| Current Rating | -50mA |
| Emitter Base Voltage (VEBO) | 3V |
| Frequency | 600MHz |
| Gain Bandwidth Product | 600MHz |
| Height | 0.93mm |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Length | 2.92mm |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 50mA |
| Max Frequency | 600MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Operating Frequency | 600 MHz |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 225mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 600MHz |
| DC Rated Voltage | -20V |
| Weight | 0.03g |
| Width | 1.3mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MMBTH81 to view detailed technical specifications.
No datasheet is available for this part.
