The MMBZ33VAWT1G is a unidirectional silicon transient voltage suppressor diode with a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -55 degrees Celsius. It has a maximum reverse voltage of 26V and a maximum non-repetitive peak reverse power dissipation of 40W. The diode is packaged in a 3-pin R-PDSO-G3 package and has a nominal breakdown voltage of 33V.
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Onsemi MMBZ33VAWT1G technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Pin Count | 3 |
| Number of Elements | 2 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 26 |
| Breakdown Voltage-Min | 31.35 |
| Non-rep Peak Rev Power Dis-Max | 40 |
| Clamping Voltage-Max | 46 |
| Breakdown Voltage-Nom | 33 |
| Breakdown Voltage-Max | 34.65 |
| Power Dissipation-Max | 0.2 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
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