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Technical Specifications
Onsemi MMDF1N05ER2 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 2A |
| Current Rating | 1A |
| Drain to Source Breakdown Voltage | 50V |
| Drain to Source Resistance | 300mR |
| Drain to Source Voltage (Vdss) | 50V |
| Fall Time | 25ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 330pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Cut Tape |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 300mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 40ns |
| DC Rated Voltage | 50V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MMDF1N05ER2 Datasheet
Download the complete datasheet for Onsemi MMDF1N05ER2 to view detailed technical specifications.
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