Dual N-Channel Power MOSFET featuring 50V drain-source breakdown voltage and 2A continuous drain current. Offers a low 300mΩ maximum drain-source on-resistance. Packaged in a narrow body SO-8 (SOIC) with a tape and reel quantity of 2500. Operates across a wide temperature range from -55°C to 150°C with 2W maximum power dissipation. Includes 20ns turn-on delay and 25ns fall time.
PackageSOIC
Current Rating1A
PolarityN-CHANNEL
Power2W
Quick Jump:
Technical Specifications
Onsemi MMDF1N05ER2G technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 2A |
| Current Rating | 1A |
| Drain to Source Breakdown Voltage | 50V |
| Drain to Source Resistance | 300mR |
| Drain to Source Voltage (Vdss) | 50V |
| Drain-source On Resistance-Max | 300MR |
| Element Configuration | Dual |
| Fall Time | 25ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 330pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 300mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 50V |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MMDF1N05ER2G Datasheet
Download the complete datasheet for Onsemi MMDF1N05ER2G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.