Dual complementary N-channel and P-channel power MOSFET with 30V drain-source breakdown voltage. Features 70mΩ drain-source resistance and 4.1A continuous drain current. Surface mountable in an SOIC package with a maximum power dissipation of 2W. Operates across a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
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Onsemi MMDF2C03HDR2G technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3A |
| Current Rating | 2A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 70mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 194ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 630pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 70mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.7V |
| Turn-Off Delay Time | 81ns |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
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