The MMDF3N02HDR2 is a surface mount N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 3.8A and a drain to source breakdown voltage of 20V. The device is packaged in a SOIC-8 case and is rated for a maximum power dissipation of 2W. The MOSFET has a gate to source voltage of 20V and an input capacitance of 630pF.
PackageSOIC
Current Rating-3.8A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi MMDF3N02HDR2 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.8A |
| Current Rating | -3.8A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 630pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 90mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 27ns |
| DC Rated Voltage | -20V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MMDF3N02HDR2 Datasheet
Download the complete datasheet for Onsemi MMDF3N02HDR2 to view detailed technical specifications.
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