
PNP Bipolar Junction Transistor (BJT) with a 50V collector-emitter breakdown voltage and 100mA continuous collector current. Features a low 250mV collector-emitter saturation voltage and a minimum hFE of 60. Packaged in a compact SOT-23-3 (TO-236) surface-mount package, supplied on a 3000-piece tape and reel. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 246mW. This component is RoHS and Halogen Free compliant.
Onsemi MMUN2112LT1G technical specifications.
| Package/Case | SOT-23-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 100mA |
| Current Rating | -100mA |
| Halogen Free | Halogen Free |
| Height | 1.01mm |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 246mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 246mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -50V |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MMUN2112LT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
