
PNP Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 100mA. Offers a low collector-emitter saturation voltage of 250mV and a minimum hFE of 80. This RoHS compliant and halogen-free component operates from -55°C to 150°C and is supplied on a 10000-piece tape and reel.
Onsemi MMUN2113LT3G technical specifications.
| Package/Case | SOT-23-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 100mA |
| Current Rating | -100mA |
| Halogen Free | Halogen Free |
| Height | 0.94mm |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 100mA |
| Max Power Dissipation | 246mW |
| Operating Supply Voltage | 50V |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 400mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -50V |
| Width | 1.3mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MMUN2113LT3G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
