NPN Digital Bipolar Junction Transistor in SOT-23-3 package. Features 50V Collector-Emitter Voltage (VCEO) and 100mA Continuous Collector Current. Offers a maximum power dissipation of 246mW and a minimum hFE of 35. Operates across a temperature range of -55°C to 150°C. RoHS and Halogen Free compliant. Packaged in Tape and Reel.
PackageSOT-23-3
Current Rating100mA
PolarityNPN
Power246mW
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Technical Specifications
Onsemi MMUN2211LT1G technical specifications.
General
Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
250mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
100mA
Current Rating
100mA
Halogen Free
Halogen Free
Height
0.94mm
hFE Min
35
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
50V
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Output Current
100mA
Max Power Dissipation
246mW
Number of Elements
1
Operating Supply Voltage
50V
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
246mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
DC Rated Voltage
50V
Weight
0.050717oz
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi MMUN2211LT1G Datasheet
Download the complete datasheet for Onsemi MMUN2211LT1G to view detailed technical specifications.
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