NPN Digital Bipolar Junction Transistor (BRT) in a 3-pin SOT-23 package. Features a 50V Collector-Emitter Breakdown Voltage and a 100mA Continuous Collector Current. Offers a low 250mV Collector-Emitter Saturation Voltage and a minimum hFE of 60. Operates within a temperature range of -55°C to 150°C with 246mW power dissipation. Packaged in tape and reel for automated assembly.
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Onsemi MMUN2212LT1G technical specifications.
| Package/Case | SOT-23-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Halogen Free | Halogen Free |
| Height | 0.94mm |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 100mA |
| Max Power Dissipation | 246mW |
| Operating Supply Voltage | 50V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 246mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Width | 1.3mm |
| RoHS | Compliant |
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