NPN Digital Bipolar Junction Transistor (BRT) in a 3-pin SOT-23 package. Features a 50V Collector-Emitter Breakdown Voltage and a 100mA Continuous Collector Current. Offers a low 250mV Collector-Emitter Saturation Voltage and a minimum hFE of 60. Operates within a temperature range of -55°C to 150°C with 246mW power dissipation. Packaged in tape and reel for automated assembly.
PackageSOT-23-3
Current Rating100mA
PolarityNPN
Power246mW
Quick Jump:
Technical Specifications
Onsemi MMUN2212LT1G technical specifications.
General
Package/Case
SOT-23-3
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
250mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
100mA
Current Rating
100mA
Halogen Free
Halogen Free
Height
0.94mm
hFE Min
60
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
50V
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Output Current
100mA
Max Power Dissipation
246mW
Operating Supply Voltage
50V
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
246mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
DC Rated Voltage
50V
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi MMUN2212LT1G Datasheet
Download the complete datasheet for Onsemi MMUN2212LT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
