NPN Bipolar Junction Transistor (BJT) for RF applications, featuring a 12V collector-emitter voltage and 50mA continuous collector current. This through-hole component operates with a 2GHz transition frequency and gain bandwidth product, offering a minimum hFE of 25 and a typical gain of 15dB. Packaged in a TO-92-3 case, it supports a wide operating temperature range from -55°C to 150°C with a maximum power dissipation of 350mW.
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Onsemi MPS5179_D75Z technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector-emitter Voltage-Max | 12V |
| Continuous Collector Current | 50mA |
| Emitter Base Voltage (VEBO) | 2.5V |
| Frequency | 2GHz |
| Gain | 15dB |
| Gain Bandwidth Product | 2GHz |
| hFE Min | 25 |
| Max Collector Current | 50mA |
| Max Frequency | 2GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 350mW |
| RoHS Compliant | Yes |
| Transition Frequency | 2GHz |
| RoHS | Compliant |
No datasheet is available for this part.
