NPN RF small signal transistor with a 2GHz transition frequency and gain bandwidth product. Features a 12V collector-emitter breakdown voltage, 50mA max collector current, and 200mW max power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in a TO-92-3 through-hole mount.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi MPS5179G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi MPS5179G technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector-emitter Voltage-Max | 12V |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 2.5V |
| Frequency | 2GHz |
| Gain Bandwidth Product | 2GHz |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 200W |
| RoHS Compliant | Yes |
| Transition Frequency | 2GHz |
| DC Rated Voltage | 12V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MPS5179G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
