NPN RF small signal transistor with a 2GHz transition frequency and gain bandwidth product. Features a 12V collector-emitter breakdown voltage, 50mA max collector current, and 200mW max power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in a TO-92-3 through-hole mount.
Frequency2GHz
PackageTO-92-3
Current Rating50mA
MountingThrough Hole
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Technical Specifications
Onsemi MPS5179G technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector-emitter Voltage-Max | 12V |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 2.5V |
| Frequency | 2GHz |
| Gain Bandwidth Product | 2GHz |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 200W |
| RoHS Compliant | Yes |
| Transition Frequency | 2GHz |
| DC Rated Voltage | 12V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MPS5179G Datasheet
Download the complete datasheet for Onsemi MPS5179G to view detailed technical specifications.
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