NPN Bipolar Junction Transistor (BJT) in a TO-92 package, featuring a 60V collector-emitter voltage (VCEO) and a maximum collector current of 2A. This component offers a minimum DC current gain (hFE) of 75 and a transition frequency of 75MHz. Operating across a temperature range of -55°C to 150°C, it has a power dissipation of 625mW. Packaged on a 2000-piece tape and reel, this lead-free and RoHS compliant transistor is suitable for various electronic applications.
Frequency75MHz
PackageTO-92-3
Current Rating2A
PolarityNPN
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Technical Specifications
Onsemi MPS651RLRAG technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 75MHz |
| Gain Bandwidth Product | 75MHz |
| hFE Min | 75 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 75MHz |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MPS651RLRAG Datasheet
Download the complete datasheet for Onsemi MPS651RLRAG to view detailed technical specifications.
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