NPN Bipolar Junction Transistor (BJT) in a TO-92 package, featuring a 60V collector-emitter voltage (VCEO) and a maximum collector current of 2A. This component offers a minimum DC current gain (hFE) of 75 and a transition frequency of 75MHz. Operating across a temperature range of -55°C to 150°C, it has a power dissipation of 625mW. Packaged on a 2000-piece tape and reel, this lead-free and RoHS compliant transistor is suitable for various electronic applications.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi MPS651RLRAG datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi MPS651RLRAG technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 75MHz |
| Gain Bandwidth Product | 75MHz |
| hFE Min | 75 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 75MHz |
| DC Rated Voltage | 60V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MPS651RLRAG to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
