PNP Bipolar Junction Transistor (BJT) for small signal amplification, featuring a TO-92-3 through-hole package. Offers a maximum collector-emitter voltage (VCEO) of 25V and a maximum collector current of 100mA. Key specifications include a minimum hFE of 300 and a maximum power dissipation of 625mW. Operates across a wide temperature range from -55°C to 150°C. Packaged in bulk for high-volume applications.
PackageTO-92-3
Current Rating-500mA
MountingThrough Hole
PolarityPNP
Quick Jump:
Technical Specifications
Onsemi MPS6523 technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 4V |
| hFE Min | 300 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 625mW |
| RoHS Compliant | No |
| DC Rated Voltage | -25V |
| Weight | 0.201g |
Compliance
| RoHS | Not Compliant |
Datasheet
No datasheet is available for this part.