NPN Bipolar Junction Transistor (BJT) for small signal applications. Features a 40V collector-emitter breakdown voltage and 1A maximum collector current. Housed in a TO-92 package for through-hole mounting. Offers a minimum DC current gain (hFE) of 90 and a maximum collector-emitter saturation voltage of 300mV. Operates across a temperature range of -55°C to 150°C with a power dissipation of 625mW.
PackageTO-92
Current Rating1A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi MPS6531 technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 90 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| Series | MPS6531 |
| DC Rated Voltage | 40V |
| Weight | 0.201g |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Onsemi MPS6531 Datasheet
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