PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 60V collector-emitter voltage (VCEO) and a maximum collector current of 2A. Operates with a transition frequency of 75MHz and a minimum hFE of 75. Packaged in a TO-92 through-hole mount, this RoHS compliant component offers a wide operating temperature range from -55°C to 150°C.
Frequency75MHz
PackageTO-92
Current Rating-2A
MountingThrough Hole
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Technical Specifications
Onsemi MPS751 technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
-80V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
500mV
Current Rating
-2A
Emitter Base Voltage (VEBO)
-5V
Frequency
75MHz
Gain Bandwidth Product
75MHz
Height
4.58mm
hFE Min
75
Lead Free
Lead Free
Length
4.58mm
Max Breakdown Voltage
60V
Max Collector Current
2A
Max Frequency
75MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Elements
1
Package Quantity
5000
Packaging
Bulk
Polarity
PNP
Power Dissipation
625mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
75MHz
DC Rated Voltage
-60V
Weight
0.201g
Width
3.86mm
Compliance
RoHS
Compliant
Datasheet
Onsemi MPS751 Datasheet
Download the complete datasheet for Onsemi MPS751 to view detailed technical specifications.
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