NPN Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-92 package. Features a 15V collector-emitter breakdown voltage (VCEO) and a 50mA maximum collector current. Offers a 600MHz transition frequency and a minimum hFE of 20. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 350mW.
Onsemi MPS918 technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 3V |
| Frequency | 600MHz |
| Gain Bandwidth Product | 600MHz |
| hFE Min | 20 |
| Lead Free | Contains Lead |
| Max Collector Current | 50mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 350mW |
| RoHS Compliant | No |
| Transition Frequency | 600MHz |
| DC Rated Voltage | 15V |
| RoHS | Not Compliant |
No datasheet is available for this part.
