The MPSA05 is a TO-92-3 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 60V and a maximum collector current of 500mA. It has a maximum power dissipation of 625mW and is suitable for through hole mounting. The transistor has a gain bandwidth product of 100MHz and a minimum current gain of 100. It operates over a temperature range of -55°C to 150°C and is RoHS compliant.
PackageTO-92-3
Current Rating500mA
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi MPSA05 technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 4V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 100 |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Series | MPSA05 |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 60V |
| Weight | 0.201g |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MPSA05 Datasheet
Download the complete datasheet for Onsemi MPSA05 to view detailed technical specifications.
No datasheet is available for this part.