NPN Bipolar Junction Transistor (BJT) in a TO-92 package. Features a 60V collector-emitter breakdown voltage (VCEO) and 60V collector-base breakdown voltage (VCBO). Offers a maximum collector current of 500mA and a minimum DC current gain (hFE) of 100. Operates with a transition frequency of 100MHz and a maximum power dissipation of 625mW. Packaged in bulk, this lead-free component is RoHS compliant.
Frequency100MHz
PackageTO-92-3
Current Rating500mA
PolarityNPN
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Technical Specifications
Onsemi MPSA05G technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 5.33mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Collector Current | 500mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 60V |
| Width | 4.19mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MPSA05G Datasheet
Download the complete datasheet for Onsemi MPSA05G to view detailed technical specifications.
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