NPN bipolar junction transistor (BJT) for small signal applications. Features a 60V collector-emitter breakdown voltage and a 500mA maximum collector current. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 100MHz. Packaged in a TO-92-3 through-hole mount configuration, supplied on a 2000-piece tape and reel. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW.
Frequency100MHz
PackageTO-92-3
Current Rating500mA
MountingThrough Hole
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Technical Specifications
Onsemi MPSA05RA technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
250mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
250mV
Current Rating
500mA
Emitter Base Voltage (VEBO)
4V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
4.58mm
hFE Min
100
Lead Free
Lead Free
Length
4.58mm
Max Breakdown Voltage
60V
Max Collector Current
500mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
625mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
60V
Weight
0.201g
Width
3.86mm
Compliance
RoHS
Compliant
Datasheet
Onsemi MPSA05RA Datasheet
Download the complete datasheet for Onsemi MPSA05RA to view detailed technical specifications.
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