The MPSA14_D27Z is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 1.2A. It is packaged in a TO-92-3 case and is designed for through-hole mounting. The transistor has a maximum power dissipation of 625mW and operates over a temperature range of -55°C to 150°C. It features a high current gain of 10,000 and a transition frequency of 125MHz.
PackageTO-92-3
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi MPSA14_D27Z technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 1.5V |
| Emitter Base Voltage (VEBO) | 10V |
| hFE Min | 10000 |
| Max Collector Current | 1.2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Transition Frequency | 125MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MPSA14_D27Z Datasheet
Download the complete datasheet for Onsemi MPSA14_D27Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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