
NPN Bipolar Junction Transistor (BJT) in a TO-92 package, featuring a 45V Collector-Emitter Voltage (VCEO) and a 200mA Max Collector Current. This component offers a minimum DC current gain (hFE) of 400 and a transition frequency of 160MHz. Designed for low noise applications, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 625mW. The transistor is RoHS compliant and comes in a box of 2000 units.
Onsemi MPSA18RLRMG technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 80mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 6.5V |
| Frequency | 160MHz |
| Gain Bandwidth Product | 160MHz |
| hFE Min | 400 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 200mA |
| Max Frequency | 160MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Box |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 160MHz |
| DC Rated Voltage | 45V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MPSA18RLRMG to view detailed technical specifications.
No datasheet is available for this part.
