NPN Bipolar Junction Transistor (BJT) in a TO-92-3 package, suitable for through-hole mounting. Features a collector-emitter breakdown voltage of 40V, a maximum collector current of 100mA, and a transition frequency of 125MHz. Offers a minimum DC current gain (hFE) of 40 and a maximum power dissipation of 625mW. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
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Onsemi MPSA20G technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 4V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 125MHz |
| Gain Bandwidth Product | 125MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 1.5W |
| RoHS Compliant | Yes |
| Transition Frequency | 125MHz |
| DC Rated Voltage | 40V |
| RoHS | Compliant |
No datasheet is available for this part.
