NPN bipolar junction transistor (BJT) in a TO-92 package. Features a 300V collector-emitter breakdown voltage (VCEO) and a 300V collector-base breakdown voltage (VCBO). Offers a maximum collector current of 500mA and a minimum DC current gain (hFE) of 25. Operates with a transition frequency of 50MHz and a maximum power dissipation of 625mW. Supplied on a 2000-piece tape and reel.
Frequency50MHz
PackageTO-92-3
Current Rating500mA
PolarityNPN
Quick Jump:
Technical Specifications
Onsemi MPSA42RL1G technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 500mA |
| Max Frequency | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 300V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MPSA42RL1G Datasheet
Download the complete datasheet for Onsemi MPSA42RL1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
