NPN Bipolar Junction Transistor (BJT) in a TO-92 package. Features a maximum collector-emitter voltage (VCEO) of 200V and a continuous collector current of 200mA. Offers a minimum DC current gain (hFE) of 50 and a transition frequency of 50MHz. Designed for through-hole mounting, this RoHS compliant component has a maximum power dissipation of 625mW and operates within a temperature range of -55°C to 150°C.
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| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 200V |
| Collector Emitter Breakdown Voltage | 200V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 200V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 50 |
| Max Breakdown Voltage | 200V |
| Max Collector Current | 100nA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 200V |
| Weight | 0.201g |
| RoHS | Not Compliant |
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