PNP Bipolar Junction Transistor (BJT) in a TO-92 package. Features a 60V collector-emitter voltage (VCEO) and a 60V collector base voltage (VCBO). Offers a maximum collector current of 500mA and a minimum DC current gain (hFE) of 100. Operates with a transition frequency of 50MHz and a maximum power dissipation of 625mW. This through-hole component is lead-free and RoHS compliant, supplied on a 2000-piece reel.
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Onsemi MPSA55RLRAG technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 500mA |
| Max Frequency | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -60V |
| RoHS | Compliant |
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