PNP Darlington Bipolar Junction Transistor (BJT) in a TO-92 package. Features a 60V collector-emitter breakdown voltage (VCEO) and a 60V collector-base voltage (VCBO). Offers a high DC current gain (hFE) of 10000 minimum and a continuous collector current of -500mA, with a peak current rating of -1.2A. Operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 625mW. Through-hole mounting and lead-free, RoHS compliant construction.
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Onsemi MPSA77 technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1.5V |
| Continuous Collector Current | -500mA |
| Current Rating | -1.2A |
| Emitter Base Voltage (VEBO) | -10V |
| hFE Min | 10000 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -60V |
| Weight | 0.201g |
| RoHS | Compliant |
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