PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector-emitter voltage (VCEO) of 300V and a maximum collector current (IC) of 500mA. Offers a minimum DC current gain (hFE) of 25 and a transition frequency (fT) of 50MHz. Packaged in a TO-92-3 through-hole mount with a maximum power dissipation of 625mW. Operates across a temperature range of -55°C to 150°C and is RoHS compliant.
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| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -200V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 500mV |
| Current | 500mA |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | PNP |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Transition Frequency | 50MHz |
| Voltage | 300V |
| DC Rated Voltage | -300V |
| Weight | 0.00709oz |
| RoHS | Not Compliant |
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