PNP Bipolar Junction Transistor (BJT) in a TO-92 package. Features a maximum collector-emitter voltage (VCEO) of -300V and a maximum collector current of -500mA. Offers a minimum DC current gain (hFE) of 25 and a transition frequency of 50MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. This RoHS compliant component is supplied in a box of 2000 units.
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Onsemi MPSA92ZL1G technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -200V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | -300V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Package Quantity | 2000 |
| Packaging | Box |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -300V |
| RoHS | Compliant |
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