NPN bipolar junction transistor with a 25V collector-emitter breakdown voltage and 650MHz transition frequency. Features a maximum continuous collector current of 50mA, a minimum DC current gain (hFE) of 60, and a maximum power dissipation of 350mW. This through-hole component is housed in a TO-92 package and operates across a temperature range of -55°C to 150°C.
Onsemi MPSH10 technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 25V |
| Continuous Collector Current | 50mA |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 3V |
| Frequency | 650MHz |
| Gain Bandwidth Product | 650MHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Frequency | 650MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Transition Frequency | 650MHz |
| DC Rated Voltage | 25V |
| Weight | 0.195g |
| RoHS | Not CompliantNo |
No datasheet is available for this part.
