NPN bipolar junction transistor (BJT) for general-purpose applications. Features a 25V collector-emitter breakdown voltage and a 50mA continuous collector current. Operates with a maximum power dissipation of 350mW and a transition frequency of 650MHz. Packaged in a TO-92-3 through-hole mount configuration, supplied in an ammo pack.
Onsemi MPSH10_D75Z technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 25V |
| Continuous Collector Current | 50mA |
| Emitter Base Voltage (VEBO) | 3V |
| Frequency | 650MHz |
| Gain Bandwidth Product | 650MHz |
| hFE Min | 60 |
| Max Collector Current | 50mA |
| Max Frequency | 650MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 650MHz |
| RoHS | Compliant |
No datasheet is available for this part.
