NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 30V collector-emitter voltage (VCEO) and 1A maximum collector current. Offers a transition frequency of 50MHz, a minimum hFE of 55, and a maximum power dissipation of 1W. Packaged in a TO-226 (TO-92) through-hole mount configuration. RoHS compliant and lead-free.
Frequency50MHz
PackageTO-226
Current Rating1A
MountingThrough Hole
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Technical Specifications
Onsemi MPSW01 technical specifications.
General
| Package/Case | TO-226 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 55 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1500 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 1W |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MPSW01 Datasheet
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