The MPSW01A is a bipolar junction transistor with a collector-emitter breakdown voltage of 40V and a collector-emitter saturation voltage of 500mV. It has a current rating of 1A and a gain bandwidth product of 50MHz. The transistor is packaged in a TO-226-3 case and is designed for through-hole mounting. It operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 1W.
PackageTO-226-3
Current Rating1A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi MPSW01A technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 55 |
| Lead Free | Contains Lead |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 1W |
| RoHS Compliant | No |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 40V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MPSW01A Datasheet
Download the complete datasheet for Onsemi MPSW01A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.