NPN bipolar junction transistor (BJT) for small signal applications. Features 80V collector-emitter breakdown voltage and 500mA maximum collector current. Offers a minimum DC current gain (hFE) of 80 and a transition frequency of 100MHz. Packaged in a TO-226 (TO-92) through-hole mount configuration. Maximum power dissipation is 1W, with an operating temperature range of -55°C to 150°C.
Frequency100MHz
PackageTO-226
Current Rating500mA
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi MPSW06 technical specifications.
General
| Package/Case | TO-226 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1500 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 1W |
| RoHS Compliant | No |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 80V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MPSW06 Datasheet
Download the complete datasheet for Onsemi MPSW06 to view detailed technical specifications.
No datasheet is available for this part.