NPN bipolar junction transistor (BJT) in a TO-92 package, featuring a maximum collector current of 500mA and a collector-emitter voltage of 80V. This component offers a power dissipation of 1W and a transition frequency of 50MHz. It operates within a temperature range of -55°C to 150°C and boasts a minimum hFE of 80. The transistor is RoHS compliant and supplied in bulk packaging.
Frequency50MHz
PackageTO-92-3
Current Rating500mA
PolarityNPN
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Technical Specifications
Onsemi MPSW06G technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 80V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MPSW06G Datasheet
Download the complete datasheet for Onsemi MPSW06G to view detailed technical specifications.
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