NPN bipolar junction transistor (BJT) for small signal applications. Features 80V collector-emitter breakdown voltage and 500mA maximum collector current. Offers a minimum DC current gain (hFE) of 80 and a transition frequency of 50MHz. Packaged in a TO-92-3 configuration, this silicon transistor operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1W.
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| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 80 |
| Lead Free | Contains Lead |
| Max Collector Current | 500mA |
| Max Frequency | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 80V |
| RoHS | Not CompliantNo |
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