PNP Bipolar Junction Transistor (BJT) in TO-92 package, designed for high current applications with a 1W power dissipation. Features a maximum collector current of 1A and a collector-emitter voltage (VCEO) of 40V. Offers a minimum DC current gain (hFE) of 55 and a transition frequency of 50MHz. Operates across a wide temperature range from -55°C to 150°C, packaged in a 2000-piece tape and reel. RoHS compliant and lead-free.
Frequency50MHz
PackageTO-92-3
Current Rating-1A
PolarityPNP
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Technical Specifications
Onsemi MPSW51ARLRAG technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -700mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 700mV |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 55 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -40V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MPSW51ARLRAG Datasheet
Download the complete datasheet for Onsemi MPSW51ARLRAG to view detailed technical specifications.
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