The MPSW56RLRA is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 80V and a collector-emitter saturation voltage of 500mV. It has a current rating of 500mA and a gain bandwidth product of 50MHz. The transistor is packaged in a 3-pin TO-226AE case and is suitable for use in applications where a high current and high voltage are required. The operating temperature range is from -55°C to 150°C, and the maximum power dissipation is 1W.
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Onsemi MPSW56RLRA technical specifications.
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 4V |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 100 |
| Lead Free | Contains Lead |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | No |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -80V |
| RoHS | Not Compliant |
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